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This notice is issued under direct-hire authority to recruit new talent to occupations for which NIST has a severe shortage of candidates.
The candidate will perform atomic resolution scanning tunneling microscopy (STM) imaging and patterning in a UHV environment. The position includes UHV system design, assembly, and testing expertise to ensure vacuum levels in the 1x10-11 torr range including UHV gas phase doping. The candidate will analyze UHV STM data for atomic patterning of H terminated silicon samples. The candidate will perform silicon UHV processing to ensure atomic order and H termination for atomic patterning. The candidate will use Scanning Kelvin/Capacitance Microscopy and atomic force microscopy to image buried dopant devices and determine GDS files and co-ordinates for ebeam patterning. The candidate will perform extensive clean room processing and develop metal silicide contacts, ebeam patterning, etching, and metallization processes for feature dimensions down to 30 nm.
Occasional travel - Attend a conference or meeting off-site
Who May Apply
This job is open to…
* All qualified U.S. citizens
* Current Federal employees serving under a career or career- conditional appointment in the competitive service;
* Former Federal employees with reinstatement eligibility;
* CTAP/ICTAP eligible;
* National Service (Peace Corps & VISTA);
* Applicants eligible under special hiring authorities (i.e., Appointment of certain military spouses, Schedule A); OR
* Veterans who are eligible under the Veterans Employment Opportunities Act (VEOA).
Job family (Series)
This job originated on www.usajobs.gov. For the full announcement and to apply, visit www.usajobs.gov/GetJob/ViewDetails/504749200. Only resumes submitted according to the instructions on the job announcement listed at www.usajobs.gov will be considered.